2 inch Free-Standing GaN wafers GaN substrate Gallium Nitride wafer

Product Details

Product Description

Product Description
Homray Material Technology’s advanced proprietary technology enables cost effective starting substrates for GaN material research and development or device production. This technology utilizes novel techniques which mitigate obstacles that have hindered high quality material growth on readily available substrates that are commonly used in the semiconductor industry.
GaN is a very hard, mechanically stable wide bandgap semiconductor material with high
heat capacity and thermal conductivity. In its pure form it resists cracking and can be
deposited in thin film on sapphire or silicon carbide, despite the mismatch in their lattice
constants.GaN can be doped with silicon (Si) or with oxygen to n-type and with magnesium
(Mg) to p-type.

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