Manufacturer of silicon carbide wafers and SiC Epi wafers

Product Details

Product Description

Product Description
Homray Material Technology provide customs (silicon carbide) SiC epitaxial on 4H substrate for the development of silicon carbide devices.SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.

Item	SiC N-Type Epi Wafer	SiC P-Type Epi Wafer
Size	3inch/ 4inch/ 6inch	3inch/ 4inch/ 6inch
Poly-type	4H	4H
Dopant	Nitrogen	Aluminum
Doping Density	ND-NA	NA-ND
Silicon Surface	9E14~1E19cm-3	9E14~1E19cm-3
Tolerance	±15%	±50%
Uniformity	≤10%	≤20%
Thickness	0.2~50μm
Tolerance	±10%	±10%
Uniformity	≤10%	≤10%

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