EV Extral Fast Charging Piles DC-DC High Power Interleaved LLC Topologies Fast Recovery Diode Frd Osg60r030hzf To247 Power Mosfet

Product Description

Product Description General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features Low RDS(ON) & FOM Extremely low switching loss Excellent stability and uniformity Ultra-fast and robust body diode
Applications PC power Telecom power Server power EV Charger Motor driver
Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	650	V
ID, pulse	240	A
RDS(ON), max @ VGS=10V	30	mΩ
Qg	178	nC

Marking Information

Product Name	Package	Marking
OSG60R030HZF	TO247	OSG60R030HZ

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	600	V
Gate-source voltage	VGS	±30	V
Continuous drain current1), TC=25 °C	ID	80	A
Continuous drain current1), TC=100 °C		50
Pulsed drain current2), TC=25 °C	ID, pulse	240	A
Continuous diode forward current1), TC=25 °C	IS	80	A
Diode pulsed current2), TC=25 °C	IS, pulse	240	A
Power dissipation3), TC=25 °C	PD	480	W
Single pulsed avalanche energy5)	EAS	2500	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.26	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	600			V	VGS=0 V, ID=1 mA
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS=VGS, ID=2 mA,
Drain-source on-state resistance	RDS(ON)		0.028	0.030	Ω	VGS=10 V, ID=40 A
			0.058			VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=600 V, VGS=0 V
Gate resistance	RG		2.1		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		9343		pF	VGS=0 V, VDS=50 V, ƒ=100 KHz
Output capacitance	Coss		708		pF
Reverse transfer capacitance	Crss		15		pF
Effective output capacitance, energy related	Co(er)		345		pF	VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related	Co(tr)		1913		pF
Turn-on delay time	td(on)		52.1		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time	tr		105.2		ns
Turn-off delay time	td(off)		125.7		ns
Fall time	tf		4.1		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		177.9		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		37.4		nC
Gate-drain charge	Qgd		78.4		nC
Gate plateau voltage	Vplateau		6.2		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.4	V	IS=80 A, VGS=0 V
Reverse recovery time	trr		186.6		ns	IS=40 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.6		μC
Peak reverse recovery current	Irrm		15.4		A

Note Calculated continuous current based on maximum allowable junction temperature. Repetitive rating; pulse width limited by max. junction temperature. Pd is based on max. junction temperature, using junction-case thermal resistance. VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.

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