Basic Info.
Model NO.
OSG60R030HZF TO247
Cooling Method
Air Cooled Tube
Function
Microwave Transistor, Switch Transistor
Working Frequency
High Frequency
Encapsulation Structure
Plastic Sealed Transistor
Description
Extremely Low Switching Loss
Characteristics
Excellent Stability and Uniformity
Type
Fast EV Charging Station
Trademark
Orientalsemiconductor
Production Capacity
20K/Monthly
Packaging & Delivery
Package Size
59.00cm * 34.00cm * 15.00cm
Package Gross Weight
18.000kg
Product Description
Product Description General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features Low RDS(ON) & FOM Extremely low switching loss Excellent stability and uniformity Ultra-fast and robust body diode
Applications PC power Telecom power Server power EV Charger Motor driver
Key Performance Parameters
Parameter | Value | Unit |
VDS, min @ Tj(max) | 650 | V |
ID, pulse | 240 | A |
RDS(ON), max @ VGS=10V | 30 | mΩ |
Qg | 178 | nC |
Marking Information
Product Name | Package | Marking |
OSG60R030HZF | TO247 | OSG60R030HZ |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Parameter | Symbol | Value | Unit |
Drain-source voltage | VDS | 600 | V |
Gate-source voltage | VGS | ±30 | V |
Continuous drain current1), TC=25 °C | ID | 80 | A |
Continuous drain current1), TC=100 °C | 50 |
Pulsed drain current2), TC=25 °C | ID, pulse | 240 | A |
Continuous diode forward current1), TC=25 °C | IS | 80 | A |
Diode pulsed current2), TC=25 °C | IS, pulse | 240 | A |
Power dissipation3), TC=25 °C | PD | 480 | W |
Single pulsed avalanche energy5) | EAS | 2500 | mJ |
MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 50 | V/ns |
Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Thermal Characteristics
Parameter | Symbol | Value | Unit |
Thermal resistance, junction-case | RθJC | 0.26 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 600 | | | V | VGS=0 V, ID=1 mA |
Gate threshold voltage | VGS(th) | 3.0 | | 4.5 | V | VDS=VGS, ID=2 mA, |
Drain-source on-state resistance | RDS(ON) | | 0.028 | 0.030 | Ω | VGS=10 V, ID=40 A |
| 0.058 | | VGS=10 V, ID=40 A, Tj=150 °C |
Gate-source leakage current | IGSS | | | 100 | nA | VGS=30 V |
| | -100 | VGS=-30 V |
Drain-source leakage current | IDSS | | | 10 | μA | VDS=600 V, VGS=0 V |
Gate resistance | RG | | 2.1 | | Ω | ƒ=1 MHz, Open drain |
Dynamic Characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Input capacitance | Ciss | | 9343 | | pF | VGS=0 V, VDS=50 V, ƒ=100 KHz |
Output capacitance | Coss | | 708 | | pF |
Reverse transfer capacitance | Crss | | 15 | | pF |
Effective output capacitance, energy related | Co(er) | | 345 | | pF | VGS=0 V, VDS=0 V-400 V |
Effective output capacitance, time related | Co(tr) | | 1913 | | pF |
Turn-on delay time | td(on) | | 52.1 | | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A |
Rise time | tr | | 105.2 | | ns |
Turn-off delay time | td(off) | | 125.7 | | ns |
Fall time | tf | | 4.1 | | ns |
Gate Charge Characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | | 177.9 | | nC | VGS=10 V, VDS=400 V, ID=40 A |
Gate-source charge | Qgs | | 37.4 | | nC |
Gate-drain charge | Qgd | | 78.4 | | nC |
Gate plateau voltage | Vplateau | | 6.2 | | V |
Body Diode Characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Diode forward voltage | VSD | | | 1.4 | V | IS=80 A, VGS=0 V |
Reverse recovery time | trr | | 186.6 | | ns | IS=40 A, di/dt=100 A/μs |
Reverse recovery charge | Qrr | | 1.6 | | μC |
Peak reverse recovery current | Irrm | | 15.4 | | A |
Note Calculated continuous current based on maximum allowable junction temperature. Repetitive rating; pulse width limited by max. junction temperature. Pd is based on max. junction temperature, using junction-case thermal resistance. VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.
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