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Wafer Fabrication Feol Beol Fab CMP Lapping Polishing Machine for Silicon Wafer

US$60,000.00-100,000.00 1 Set (MOQ)

Basic Info.

Model NO.
0
Condition
New
Number of Station
4
Plate Rotate Speed
0-90 Rpm
Cylinder Bar Rotate Speed
0-40 Rpm
Total Weight
2200kg
Floor Space
2200*1200mm
Transport Package
Sea
Specification
2000KG
Trademark
MINDERHIGHTECH
Origin
Guangzhou
HS Code
8501109101

Product Description

MDS8104LMFR/MDS8104PMFR
SEMIAUTO SUBSTRATE LAPPING/POLISHING MACHINE
Machine Application
Process Type Sort by Process Material Sort by Application
SINGLE SIDE
PLATE
LAPPING &
POLISHING		 Metal & Alloy
Ceramic
Oxide
Carbide
Glass
Plastic
Semi Conductor		 LED substrate
Si, SiC, Ge, Ge-Si, GaN, GaAs, GaAsAl, GaAsP, InSb, InP, ZnO, AlN, Al2O3, etc.
Resin PE,E/VAC,SBS,SBR,NBR,SR,BR,PR
PCB ,, adhensive,coating,circuit
Optical ,,,HUDoptical lens,HUD glass, screen glass
Radar
Gemstaone
Others		 Oxide coating plate
Jade,sapphire,agate etc
Valve sealing ring. Micrometer Diamond,bearing,etc
Lapping can only remove slight thickness of object.if thining margin>=100um, thinner machine are needed.(contact us for thinner)
Machine Specification
Machine Class
Standard Specification
Machine Series MDS8104LMFR
Plate diameter Φ810mm
Max. Object Diameter Φ350 mm
Number of station 4
Plate Rotate Speed 0-90 RPM
Cylinder Bar Rotate Speed 0-40 RPM
Facing & Grooving Speed
Not include in Polishing		 0-120mm/m
Total weight 2200kg
Floor space 2200*1200mm
Optional Choice Specification
Controls Digital / Touch-screen PLC
Pressure Source Integrated with PLC
Facing & Grooving system Digital / Manual control feeding depth integrated with PLC /
PLC control feeding depth integrated with PLC
Plate cooling system Integrated in Machine
Slurry supply system Digital / integrated with PLC
Cylinder Bar Drive System Integrated with PLC
Dust Vacuum system Manual / Integrated with PLC

1,Sample making based on production requirement can confirm the necessity of optional kits.
2,The shaded options is buit in this machine.
3,Facing and Grooving system is unnecessary for polishing machine and not configured.
4,Substrate Lapping/Polishing machine is highly configured, A dust-proof shelter is utilized for protection from fugitive or solid particle scraping against object's surface while processing, especially when polishing.
5,Contact us for more type of lapping/polishing machine
Samples

Sample Record
Application & Material
MDS8104LMFR/MDS8104PMFR
SEMIAUTO SUBSTRATE LAPPING/POLISHING MACHINE
Machine Application
Process Type Sort by Process Material Sort by Application
SINGLE SIDE
PLATE
LAPPING &
POLISHING		 Metal & Alloy
Ceramic
Oxide
Carbide
Glass
Plastic
Semi Conductor		 LED substrate
Si, SiC, Ge, Ge-Si, GaN, GaAs, GaAsAl, GaAsP, InSb, InP, ZnO, AlN, Al2O3, etc.
Resin PE,E/VAC,SBS,SBR,NBR,SR,BR,PR
PCB ,, adhensive,coating,circuit
Optical ,,HUDoptical lens,HUD glass, screen glass
Radar
Gemstaone
Others		 Oxide coating plate
Jade,sapphire,agate etc
Valve sealing ring. Micrometer Diamond,bearing,etc
Lapping can only remove slight thickness of object.if thining margin>=100um, thinner machine are needed.(contact us for thinner)
Machine Specification
Machine Class
()
Flat Lapping
Machine		 ()
Double Disc
Lapping Machine
Brush Polishing
Machine
Substrate Grinding/Thinning Machine
Standard Specification
Machine Series MDS8104LMFR
Plate diameter Φ810mm
Max. Object Diameter Φ350 mm
Number of station 4
Plate Rotate Speed 0-90 RPM
Cylinder Bar Rotate Speed 0-40 RPM
Facing & Grooving Speed
Not include in Polishing		 0-120mm/m
Total weight 2200kg
Floor space 2200*1200mm
Optional Choice Specification
Controls Digital / Touch-screen PLC
Pressure Source Integrated with PLC
Facing & Grooving system Digital / Manual control feeding depth integrated with PLC /
PLC control feeding depth integrated with PLC
Plate cooling system Integrated in Machine
Slurry supply system Digital / integrated with PLC
Cylinder Bar Drive System Integrated with PLC
Dust Vacuum system Manual / Integrated with PLC

1,Sample making based on production requirement can confirm the necessity of optional kits.
2,The shaded options is buit in this machine.
3,Facing and Grooving system is unnecessary for polishing machine and not configured.
4,Substrate Lapping/Polishing machine is highly configured, A dust-proof shelter is utilized for protection from fugitive or solid particle scraping against object's surface while processing, especially when polishing.
5,Contact us for more type of lapping/polishing machine
Samples

Sample Record
Application & Material
Diagonal Diameter
Process
Type
Flatness
Roughness
Parallel
Thickness
Note
Industrial Sapphire
 various Lapping
Polishing		 2μm ≤Ra 0.02 μm 5μm
±1μm		 0.2mm N
Solar Wafer Various Lapping 1μm Not Required 2μm
±1μm		 0.15mm N
Substrate
CaC2		 Φ22mm Lapping 0.5μm Not Required 1μm
±0.5μm		 0.05mm N
Wafer
Si		 Various Lapping
Polishing		 2μm ≤Ra 0.02 μm 3μm
±1μm		 0.1mm N
LED substrate copper Φ169mm Lapping
Polishing 		5μm ≤Ra 0.01 μm 5μm
±1μm		 Not required N
Substrate
MgO 		Φ72mm Lapping 1μm Not Required 1μm 0.1mm N
Substrate
Al2O3		 Φ158mm Lapping
Polishing		 3um ≤Ra 0.02 μm 3um
±1μm		 0.13mm N

onal Diameter
Process
Type
Flatness		 Roughness
Parallel
Thickness
Note
Industrial Sapphire
 various Lapping
Polishing		 2μm ≤Ra 0.02 μm 5μm
±1μm		 0.2mm N
Solar Wafer Various Lapping 1μm Not Required 2μm
±1μm		 0.15mm N
Substrate
CaC2		 Φ22mm Lapping 0.5μm Not Required 1μm
±0.5μm		 0.05mm N
Wafer
Si		 Various Lapping
Polishing		 2μm ≤Ra 0.02 μm 3μm
±1μm		 0.1mm N
LED substrate copper Φ169mm Lapping
Polishing 		5μm ≤Ra 0.01 μm 5μm
±1μm		 Not required N
Substrate
MgO 		Φ72mm Lapping 1μm Not Required 1μm 0.1mm N
Substrate
Al2O3		 Φ158mm Lapping
Polishing		 3um ≤Ra 0.02 μm 3um
±1μm		 0.13mm N

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