| US$0.10-1.20 | 100 Pieces (MOQ) |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 2.7 A |
| Rds On - Drain-Source Resistance: | 116 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 2.5 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 1.25 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Configuration: | Single |
| Fall Time: | 4.2 ns |
| Forward Transconductance - Min: | 7.6 s |
| Height: | 1.1 mm |
| Length: | 2.9 mm |
| Product Type: | MOSFET |
| Rise Time: | 6.3 ns |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 6.8 ns |
| Typical Turn-On Delay Time: | 5.4 ns |
| Width: | 1.3 mm |
| Unit Weight: | 0.000282 oz |
