Basic Info.
Model NO.
OSS65R340FF TO220F
Working Frequency
High Frequency
Function
Power Triode, Switching Triode
Description
Extremely Low Switching Loss
Characteristics
Excellent Stability and Uniformity
Specification
OSS65R340FF TO220F
Trademark
Orientalsemiconductor
Production Capacity
20kkkk/Monthly
Packaging & Delivery
Package Size
59.00cm * 34.00cm * 15.00cm
Package Gross Weight
19.000kg
Product Description
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® SuperSi series is based on Oriental Semiconductor's unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits.
Features Low RDS(ON) & FOM Extremely low switching loss Excellent stability and uniformity Easy to design in
Applications PD charger Large screen display Telecom power Server power
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 700 | V |
| ID, pulse | 36 | A |
| RDS(ON), max @ VGS=10V | 340 | mΩ |
| Qg | 9.6 | nC |
Marking Information
| Product Name | Package | Marking |
| OSS65R340DF | TO252 | OSS65R340D |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 650 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1), TC=25 °C | ID | 12 | A |
| Continuous drain current1), TC=100 °C | 7.6 |
| Pulsed drain current2), TC=25 °C | ID, pulse | 36 | A |
| Continuous diode forward current1), TC=25 °C | IS | 12 | A |
| Diode pulsed current2), TC=25 °C | IS, pulse | 36 | A |
| Power dissipation3), TC=25 °C | PD | 83 | W |
| Single pulsed avalanche energy5) | EAS | 200 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 1.5 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 650 | | | V | VGS=0 V, ID=250 μA |
| 700 | | | VGS=0 V, ID=250 μA, Tj=150 °C |
| Gate threshold voltage | VGS(th) | 2.9 | | 3.9 | V | VDS=VGS, ID=250 μA |
Drain-source on- state resistance | RDS(ON) | | 0.30 | 0.34 | Ω | VGS=10 V, ID=6 A |
| | 0.73 | | VGS=10 V, ID=6 A, Tj=150 °C |
| Gate-source leakage current | IGSS | | | 100 | nA | VGS=30 V |
| | | -100 | VGS=-30 V |
| Drain-source leakage current | IDSS | | | 1 | μA | VDS=650 V, VGS=0 V |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | | 443.5 | | pF | VGS=0 V, VDS=50 V, ƒ=100 KHz |
| Output capacitance | Coss | | 59.6 | | pF |
| Reverse transfer capacitance | Crss | | 1.7 | | pF |
| Turn-on delay time | td(on) | | 22.4 | | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=6 A |
| Rise time | tr | | 17.5 | | ns |
| Turn-off delay time | td(off) | | 40.3 | | ns |
| Fall time | tf | | 7.2 | | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | | 9.6 | | nC | VGS=10 V, VDS=400 V, ID=6 A |
| Gate-source charge | Qgs | | 2.2 | | nC |
| Gate-drain charge | Qgd | | 4.5 | | nC |
| Gate plateau voltage | Vplateau | | 6.5 | | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | | | 1.3 | V | IS=12 A, VGS=0 V |
| Reverse recovery time | trr | | 236.5 | | ns | VR=400 V, IS=6 A, di/dt=100 A/μs |
| Reverse recovery charge | Qrr | | 2.2 | | μC |
| Peak reverse recovery current | Irrm | | 19.1 | | A |
Note Calculated continuous current based on maximum allowable junction temperature. Repetitive rating; pulse width limited by max. junction temperature. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.
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