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GaN Epi wafer On silicon carbide supplier

Product Details

Product Details

Product Description

Product Description
The HMTRF product is a state-of-the-art (Al,Ga)N/GaN heteroepitaxial layer structure deposited crack-free on a (111) high resistance Si-wafer for RF power applications. SPS offers two standard HEMT structures: one having an Al0.25Ga0.75N barrier without an AlN spacer layer and the other one having an Al0.25Ga0.75N barrier with an AlN spacer layer. Custom barrier, cap layer and in-situ SiN designs are available upon request
Homray Material as the leading manufacturer and supplier of Gallium Nitride(GaN)Epi wafer, GaN substrate wafer, Silicon Carbide (SiC) Epi wafer, SiC substrate wafer for the wide bandgap semiconductor; Dummy Grade Silicon Wafer, Test Grade Silicon Wafer, We can produce wide range of Compound Semiconductor Wafer and LED Wafer Substrate including Nitride Semiconductor: 2 inch, 4 inch GaN Templates, 2inch Free-Standing GaN Substrates, Semi-insulating GaN Substrates; Carbide Semiconductor: SiC Conductive Substrates , SiC Epitaxial Wafer so as to meet our various customer's requests, including researching grade, dummy and foundry grade.
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Layer Name
Description
Thickness
Comment
Substrate
2-8 inch (111)
625-1200um
Other substrate diameters available upon request
HR Buffer
Buffer
1-3um
Buffer schemes can be customized
GaN Channel
GaN
~100-200nm
Can be customized
Spacer Layer
AIN
~1nm
Thickness can be customized
Barrier
AI0.25GA0.75N
25nm
Thickness and composition can be customized
Cap Layer
GaN or SiN
2nm
Can be customized


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