GaN Epi wafer On silicon carbide supplier

Product Details

Product Description

Product Description
The HMTRF product is a state-of-the-art (Al,Ga)N/GaN heteroepitaxial layer structure deposited crack-free on a (111) high resistance Si-wafer for RF power applications. SPS offers two standard HEMT structures: one having an Al0.25Ga0.75N barrier without an AlN spacer layer and the other one having an Al0.25Ga0.75N barrier with an AlN spacer layer. Custom barrier, cap layer and in-situ SiN designs are available upon request
Homray Material as the leading manufacturer and supplier of Gallium Nitride(GaN)Epi wafer, GaN substrate wafer, Silicon Carbide (SiC) Epi wafer, SiC substrate wafer for the wide bandgap semiconductor; Dummy Grade Silicon Wafer, Test Grade Silicon Wafer, We can produce wide range of Compound Semiconductor Wafer and LED Wafer Substrate including Nitride Semiconductor: 2 inch, 4 inch GaN Templates, 2inch Free-Standing GaN Substrates, Semi-insulating GaN Substrates; Carbide Semiconductor: SiC Conductive Substrates , SiC Epitaxial Wafer so as to meet our various customer's requests, including researching grade, dummy and foundry grade.
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Layer Name	Description	Thickness	Comment
Substrate	2-8 inch (111)	625-1200um	Other substrate diameters available upon request
HR Buffer	Buffer	1-3um	Buffer schemes can be customized
GaN Channel	GaN	~100-200nm	Can be customized
Spacer Layer	AIN	~1nm	Thickness can be customized
Barrier	AI0.25GA0.75N	25nm	Thickness and composition can be customized
Cap Layer	GaN or SiN	2nm	Can be customized

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