Product Details
Product Description
Product Description
Homray Material Technology offers the best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch silicon carbide substrate, widely used in electronic devices with high power and high frequency, light emitting diode (LED) and other. light-emitting diode (LED) is the use of semiconductor electrons and holes in a combination of electronic components, is an energy-saving cold light source. SiC material has the advantages of low lattice mismatch with GaN, high thermal conductivity. The third generation of semiconductors represented by SiC has a high bandwidth, high thermal conductivity, high field breakdown, high saturation electron drift rate, stable chemical properties, high hardness, abrasion resistance, high bond.
SiC wafer is the foremost semiconductor material that can operate at higher temperature, power level, and voltage. These unique properties of SiC can apply to variety applications like Power electronic switches, LED technology and Hybrid Electric vehicles.
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