Product Details
Product Description
Product Description
5SHY35L4520 5SXE10-0181 ABB Thyristor inquiry
5SHY35L4520 5SXE10-0181 ABB Thyristor inquiry
· High snubberless turn-off rating · Optimized for medium frequency · High electromagnetic immunity · Simple control interface with status feedback · AC or DC supply voltage · Option for series connection (contact factory)
Parameter Symbol Conditions min typ max Unit Rep. peak off-state voltage VDRM Gate Unit energized 4500 V Permanent DC voltage for 100 FIT failure rate of GCT VDC Ambient cosmic radiation at sea level in open air. Gate Unit energized 2800 V Reverse voltage VRRM 17 V Characteristic values Parameter Symbol Conditions min typ max Unit Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized 50 mA
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Mechanical data (see Fig. 11, 12) Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Mounting force Fm 36 40 44 kN Characteristic values Parameter Symbol Conditions min typ max Unit Pole-piece diameter Dp ± 0.1 mm 85 mm Housing thickness H clamped Fm =40kN 25.7 26.2 mm Weight m 2.9 kg Surface creepage distance Ds Anode to Gate 33 mm Air strike distance Da Anode to Gate 10 mm Length l ± 1.0 mm 439 mm Height h ± 1.0 mm 41 mm Width IGCT w ± 1.0 mm 173 mm
Parameter Symbol Conditions min typ max Unit Max. average on-state current IT(AV)M Half sine wave, TC = 85 °C, Double side cooled 1700 A Max. RMS on-state current IT(RMS) 2670 A Max. peak non-repetitive surge on-state current ITSM tp = 3 ms, Tj = 125 °C, sine wave after surge: VD = VR = 0 V 50×103 A Limiting load integral I 2 t 3.75×106 A2s Max. peak non-repetitive surge on-state current ITSM tp = 10 ms, Tj = 125 °C, sine wave after surge: VD = VR = 0 V 32×103 A Limiting load integral I 2 t 5.12×106 A2s Max. peak non-repetitive surge on-state current ITSM tp = 30 ms, Tj = 125 °C, sine wave after surge: VD = VR = 0 V 20.5×103 A Limiting load integral I 2 t 6.3×106 A2s Stray inductance between GCT and antiparallel diode LD Only relevant for applications with antiparallel diode to the IGCT 300 nH Critical rate of rise of onstate current diT/dt(cr) For higher diT/dt and current lower than 100 A an external retrigger puls is required. 200 A/µs Characteristic values Parameter Symbol Conditions min typ max Unit On-state voltage VT IT = 4000 A, Tj = 125 °C 2.35 2.7 V Threshold voltage V(T0) Tj = 125 °C IT = 1000...4000 A 1.4 V Slope resistance rT 0.325 mW
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