IPW60R099C6 Trans MOSFET N-Ch 650V 38A TO247-3

Product Description

description IPW60R099C6 : MOSFET N-Ch 600V 37.9A CoolMOS TO247
Mfr. Part#: IPW60R099C6
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR

Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	37.9 A
Rds On - Drain-Source Resistance:	90 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	119 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	278 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Series:	CoolMOS C6
Packaging:	Tube
Configuration:	Single
Fall Time:	6 ns
Height:	21.1 mm
Length:	16.13 mm
Product Type:	MOSFET
Rise Time:	12 ns
Factory Pack Quantity:	240
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	75 ns
Typical Turn-On Delay Time:	15 ns
Width:	5.21 mm
Part # Aliases:	IPW6R99C6XK SP000641908 IPW60R099C6FKSA1
Unit Weight:	0.211644 oz

DESCRIPTION
CoolMOS C6 combines Infineon's experience as the leading Superjunction MOSFET supplier with Best-in-Class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. Key Features
Easy control of switching behavior Extremely low losses due to very low Figure of Merit (R DS(ON)* Q gand E oss) Very high commutation ruggedness Easy to use Better light load efficiency compared to C3 Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness Better price performance in comparison to previous CoolMOS™ generations More efficient, more compact, lighter and cooler APPIications
PFC stages,hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox,Adapter,LCD & PDP Tv,
Lighting,Server,Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.






Certificates
Product Packing details
Why choosing us
Located in Shenzhen, the electronic market center of China. 100% guarantee components quality: Genuine Original. Sufficient stock on your urgent demand. Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing Faster shipment: In stock components can ship the same day . 24 Hours service
Notice:
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