Product Details
Product Description
Product Description
Focus on DCS, PLC, robot control system and large servo system.
Main products: various modules / cards, controllers, touch screens, servo drivers.
Advantages: supply of imported original products, professional production parts,
Fast delivery, accurate delivery time,
The main brands include ABB Bailey, Ge / fuanc, Foxboro, Invensys Triconex, Bently, A-B Rockwell, Emerson, ovation, Motorola, xyvom, Honeywell, Rexroth, KUKA, Ni, Deif, Yokogawa, Woodward, Ryan, Schneider, Yaskawa, Moog, prosoft and other brands
| UNS4881b,V4 3BHE009949R0004 |
Typical Applications (continued) 8.2.1.2.4 Current Limit With Additional Slope Compensation If an external slope compensation resistor is used (see Figure 23) the internal control signal will be modified and this will have an effect on the current limit. If RSL is used, then this will add to the existing slope compensation. The command voltage, VCS, will then be given by: VCS = VSENSE − D x (VSL + ΔVSL) (33) Where VSENSE is a defined parameter in the Electrical Characteristics section and ΔVSL is the additional slope compensation generated as discussed in the Slope Compensation Ramp section. This changes the equation for RSEN to: (34) Note that because ΔVSL = RSL x K as defined earlier, RSLcan be used to provide an additional method for setting the current limit. In some designs RSL can also be used to help filter noise to keep the ISEN pin quiet. 8.2.1.2.5 Power Diode Selection Observation of the boost converter circuit shows that the average current through the diode is the average load current, and the peak current through the diode is the peak current through the inductor. The diode should be rated to handle more than the inductor peak current. The peak diode current can be calculated using the formula: ID(Peak) = [IOUT/ (1−D)] + ΔiL (35) In Equation 35, IOUT is the output current and ΔiL has been defined in Figure 32. The peak reverse voltage for a boost converter is equal to the regulator output voltage. The diode must be capable of handling this peak reverse voltage. To improve efficiency, a low forward drop Schottky diode is recommended. 8.2.1.2.6 Power MOSFET Selection The drive pin, DR, of the LM3481 must be connected to the gate of an external MOSFET. In a boost topology, the drain of the external N-Channel MOSFET is connected to the inductor and the source is connected to the ground. The drive pin voltage, VDR, depends on the input voltage (see Typical Characteristics). In most applications, a logic level MOSFET can be used. For very low input voltages, a sub-logic level MOSFET should be used. The selected MOSFET directly controls the efficiency. The critical parameters for selection of a MOSFET are: • Minimum threshold voltage, VTH(MIN) • On-resistance, RDS(ON) • Total gate charge, Qg • Reverse transfer capacitance, CRSS • Maximum drain to source voltage, VDS(MAX) The off-state voltage of the MOSFET is approximately equal to the output voltage. VDS(MAX) of the MOSFET must be greater than the output voltage. The power losses in the MOSFET can be categorized into conduction losses and ac switching or transition losses. RDS(ON) is needed to estimate the conduction losses. The conduction loss, PCOND, is the I 2R loss across the MOSFET. The maximum conduction loss is given by: (36) where DMAX is the maximum duty cycle. (37) At high switching frequencies the switching losses may be the largest portion of the total losses
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