Product Details
Product Description
Product Description
5SHY3545L0016 3BHB019719R0101 ABB Silicon controlled unit
5SHY3545L0016 3BHB019719R0101 ABB Silicon controlled unit
Our Email: 2235954483@qq.com
contact number:13313705507
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Fm: Fm is the mounting force necessary to establish a good electrical and thermal contact. It is very important that Fm stays within the specified limits, even under limiting operating temperature. Thermal expansions and tolerances of stack parts have to be considered in the design of the clamping system. Too low a mounting force results in increased thermal resistance and - particularly at high currents - in damage to the dry interfaces within the housing that may provoke degradation. Also the individual cathode segments might not all be correctly contacted, leading to an increase in VT and drastic reduction of ITSM and ITGQM. Exceeding Fm leads to increased mechanical stress on the silicon wafer, particularly where thermal cycling is severe. This reduces life-expectancy of the device and can lead to premature wear-out of the cathode segment metallization with subsequent gate-tocathode short circuits. Besides a correct mounting force, it is also vital that the pressure is distributed homogeneously over the contact area. If not, the copper pole pieces of the housing may deform plastically, which in turn, may lead to localized mechanical stress on the silicon wafer with subsequent degradation of the device performance or even fracturing of the wafer. Details concerning a correct clamping system are described in application note 5SYA 2036 «Recommendations regarding mechanical clamping of press pack high power semiconductors».
If no external force is applied across a press-pack semiconductor, the silicon wafer will probably not contact the pole pieces at all. For even the most basic device verifications (blocking or gating checks by service personnel), a minimum clamping force of about 1 kN is required to establish contact for low-current measurements.
m: The weight of the complete device, including the gate unit. Ds : The surface creepage distance is defined as the shortest path along the ceramic surface between the anode flange and the gate contact. Da : The air strike distance is defined as the shortest direct path between the anode side and the gate contact. I T(AV)M, IT(RMS): The max. average and root-mean-square on-state currents, respectively. These values are established with given boundary conditions. IT(AV)M and IT(RMS) are the average and RMS values of the half-sinusoidal on-state current when the junction operates at its maximum temperature with the case temperature fixed at a given value, here 85 °C. These figures give a comparative value for current handling capability at low frequency (negligible switching losses). They are mainly used to compare different products for on-state performance and they indicate a maximum current capability for the defined temperatures. As with all comparisons, the thermal conditions must be considered as they may differ from product to product and between suppliers, which substantially influences the current ratings.
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